LX3044 / 45 / 46 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 1 www. microsemi . com 10.3 gbps coplanar gaas pin photo diode integrated products copyright ? 2000 rev. 1.0, 2002-10-29 description microsemi?s gaas coplanar pin photo diode chips are ideal for high bandwidth 850nm optical networking applications. the device family offers superior noise performance and sensitivity in single die, 1x4 array die or 1x12 array die. the lx304x family of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly using either bond wire or flip chip configurations. this device is ideal for manufacturers of optical receivers, transponders, optical transmission modules and combination pin photo diode ? transimpedance amplifier. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features LX3044 single die lx3045, 1x4 array die lx3046, 1x12 array die coplanar waveguide , 50ohm high responsivity low dark current high bandwidth anode/cathode on illuminated side 125mm pad pitch die good for bond wire or flip chip applications applications short reach optical networks 10gigabit ethernet, fibre channel vcsel array receiver benefits large wirebond contact pads low contact resistance product highlight coplanar design (gnd-signal-gnd) 50 ohm characteristic impedance 125 um standard pad pitch for ease of test large 75um x 75um pad size for ease of packaging wire bond or flip chip capability single die 1x4 die 1x12 die package order info die dimension 1 (m) pad dimension 1 (m) t j ( c) die die active area, a (m) y x w v pad pitch, p 1 (m) die thickness 1 (m) LX3044 450 450 75 75 125 152 lx3045 450 1200 75 75 125 203 0 to 70 lx3046 75 450 3200 75 75 125 203 1. see package dimensions (page 4) note: available in tape & reel. append the letter ?t? to the part number. (i.e. LX3044t) l l x x 3 3 0 0 4 4 x x www.datasheet.in
LX3044 / 45 / 46 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 2 www. microsemi . com 10.3 gbps coplanar gaas pin photo diode integrated products copyright ? 2000 rev. 1.0, 2002-10-29 electrical characteristics unless otherwise specified, the following specificat ions apply over the following test conditions: t a = 25oc, v r = 5 volts lx304x parameter symbol test conditions min typ max units ` maximum ratings operating junction temperature range t j -20 +100 c storage temperature range t stg -55 +125 c maximum soldering temperature 10 seconds maximum at temperature 260 c ` electrical characteristics active area diameter 75 m responsivity r v r = 5v, = 850nm 0.55 0.6 a/w dark current i d v r = 5v 0.1 0.5 na breakdown voltage bv r i r = 2 a 30 47 volts capacitance c v r = 5v 0.3 0.33 pf bandwidth (1) bw v r = 5v, = 850nm @ -3db 7.8 8.1 ghz rf cross-talk s 21 1x4 and 1x12array only @ 10ghz -40 db note: 1. bandwidth is measured at ?3db electrical power (photocurrent drops to 71% of dc value) into a 50 ? load. circuit model r diode c diode c shunt r ser l ser part # rser ( ? ) lser (nh) cshunt (ff) cdiode (ff) rdiode (m ? ) lx304x 12.3 0.12 118.5 172 187 e e l l e e c c t t r r i i c c a a l l s s www.datasheet.in
LX3044 / 45 / 46 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 3 www. microsemi . com 10.3 gbps coplanar gaas pin photo diode integrated products copyright ? 2000 rev. 1.0, 2002-10-29 characteristic curves LX3044/5/6 cv 0.26 0.27 0.28 0.29 0.3 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 012345678910 v c (pf) c@85oc (pf) c@25oc (pf) dark current vs voltage over temperature 0.010 0.100 1.000 10.000 0.0 v 2.0 v 4.0 v 6.0 v 8.0 v 10.0 v 12.0 v 14.0 v 16.0 v bias voltage (v) id (na) -30 deg c -10 deg c 25 deg c 50 deg c 85 deg c 110 deg c calibrated bw vs temperature LX3044 -20 -15 -10 -5 0 5 0.0e+ 00 1.0e+ 09 2.0e+ 09 3.0e+ 09 4.0e+ 09 5.0e+ 09 6.0e+ 09 7.0e+ 09 8.0e+ 09 9.0e+ 09 1.0e+ 10 frequency (hz) relative s21 (db) 25c 85c 5c bvr @ ir=2ua 0.00 10.00 20.00 30.00 40.00 50.00 60.00 -40 -20 0 20 40 60 80 100 120 temperature bv (v) max avg min l limit lx3046 rf-crosstalk -90 -80 -70 -60 -50 -40 -30 0.0e+00 5.0e+09 1.0e+10 1.5e+10 2.0e+10 frequency (hz) crosstalk (db) top (7,8) center (6,7) bottom (6,7) left (6,7) right (6,7) c c h h a a r r t t s s www.datasheet.in
LX3044 / 45 / 46 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 4 www. microsemi . com 10.3 gbps coplanar gaas pin photo diode integrated products copyright ? 2000 rev. 1.0, 2002-10-29 package dimensions die lx304x n contact n contact p p a a c c k k a a g g e e www.datasheet.in
LX3044 / 45 / 46 p roduction d ata s heet microsemi integrated products division 11861 western avenue, garden grove, ca. 92841, 714-898-8121, fax: 714-893-2570 page 5 www. microsemi . com 10.3 gbps coplanar gaas pin photo diode integrated products copyright ? 2000 rev. 1.0, 2002-10-29 notes production data ? information contained in this document is proprietary to microsemi and is current as of publication date. this document may not be modified in any way without the express written consent of microsemi. product processing does not necessarily include testing of all parameters. microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. n n o o t t e e s s www.datasheet.in
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